We have investigated highly doped GaAs:Te at different doping concentrations (≳1017 cm-3) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed. © 1995 American Institute of Physics.
Castaldini, A., Cavallini, A., Fraboni, B., Piqueras, J. (1995). The EL2 trap in highly doped GaAs:Te. JOURNAL OF APPLIED PHYSICS, 78(11), 6592-6595 [10.1063/1.360480].
The EL2 trap in highly doped GaAs:Te
Castaldini A.;Cavallini A.;Fraboni B.;
1995
Abstract
We have investigated highly doped GaAs:Te at different doping concentrations (≳1017 cm-3) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed. © 1995 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
