The disappearance of the electron trap at Et = Ec-0.82 eV (EL2) level in highly doped samples, observed in the literature for ND-NA>1×1017 cm-3, has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te with ND-NA up to about 7×1017 cm-3. By choosing appropriate spectroscopy methods, we have detected the EL2 peak, even in the most doped sample. This shows that such a defect is present in the material, but its detection is controlled by the quasi-Fermi level position in the gap, which also affects the Schottky diode operating conditions. © 1994.
Castaldini, A., Cavallini, A., Fraboni, B., Piqueras, J. (1994). Junction spectroscopy of highly doped GaAs: detection of the EL2 trap. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 28(1-3), 397-399 [10.1016/0921-5107(94)90091-4].
Junction spectroscopy of highly doped GaAs: detection of the EL2 trap
Castaldini A.;Cavallini A.;Fraboni B.;
1994
Abstract
The disappearance of the electron trap at Et = Ec-0.82 eV (EL2) level in highly doped samples, observed in the literature for ND-NA>1×1017 cm-3, has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te with ND-NA up to about 7×1017 cm-3. By choosing appropriate spectroscopy methods, we have detected the EL2 peak, even in the most doped sample. This shows that such a defect is present in the material, but its detection is controlled by the quasi-Fermi level position in the gap, which also affects the Schottky diode operating conditions. © 1994.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
