Charge collection analyses have been carried out on Er-doped silicon to investigate the excitation and de-excitation mechanisms of the Er3+ ion related to the λ = 1.54 μm luminescence. Carrier recombination and trapping at the defective states induced in the material by the presence of Er play a significant role in the excitation of the Er3+ ion and in its nonradiative decay by the energy back-transfer process. We have obtained a two-dimensional map of the lattice sites where the back-transfer process occurs, and provided experimental proof of the cooperation of two different defects in the excitation and de-excitation processes. © 2000 American Institute of Physics.
Castaldini, A., Cavallini, A., Fraboni, B., Pizzini, S. (2000). Charge collection mapping of the back-transfer process in Er-doped silicon. APPLIED PHYSICS LETTERS, 76(24), 3585-3587 [10.1063/1.126714].
Charge collection mapping of the back-transfer process in Er-doped silicon
Castaldini A.;Cavallini A.;Fraboni B.;
2000
Abstract
Charge collection analyses have been carried out on Er-doped silicon to investigate the excitation and de-excitation mechanisms of the Er3+ ion related to the λ = 1.54 μm luminescence. Carrier recombination and trapping at the defective states induced in the material by the presence of Er play a significant role in the excitation of the Er3+ ion and in its nonradiative decay by the energy back-transfer process. We have obtained a two-dimensional map of the lattice sites where the back-transfer process occurs, and provided experimental proof of the cooperation of two different defects in the excitation and de-excitation processes. © 2000 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
