We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd0.8Zn0.2Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at Ev+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2×10-16, 1×10-16, and 4×10-17 cm2, respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at Ev+0.12 eV as being a VCd+ClTe donor-acceptor pair center. All three levels may be present in the 1.4 eV luminescence band. © 1996 American Institute of Physics.
Castaldini, A., Cavallini, A., Fraboni, B., Fernandez, P., Piqueras, J. (1996). Comparison of electrical and luminescence data for the A center in CdTe. APPLIED PHYSICS LETTERS, 69(23), 3510-3512 [10.1063/1.117228].
Comparison of electrical and luminescence data for the A center in CdTe
Castaldini A.;Cavallini A.;Fraboni B.;
1996
Abstract
We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd0.8Zn0.2Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at Ev+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2×10-16, 1×10-16, and 4×10-17 cm2, respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at Ev+0.12 eV as being a VCd+ClTe donor-acceptor pair center. All three levels may be present in the 1.4 eV luminescence band. © 1996 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
