Abstract—Long–channel effective mobilities as well as transfer characteristics of a 32 nm single–gate SOI and a 16 nm double– gate (DG) MOSFET have been simulated with five different Monte Carlo (MC) device simulators. The differences are mostly rather small for the SOI–FET with quantum effects having a minor effect on threshold voltage due to the lowly doped channel, while the two multi–subband MC simulators show some prominent deviations in the case of the DG–FET. High– mobility degradation by remote phonon scattering (RPS) in free carrier MC approximation leads to smaller performance degradation compared to multi–subband MC with remote Coulomb scattering (RCS) and RPS, but requires further investigations.
Bufler F.M., Aubry-Fortuna V., Bournel A., Braccioli M., Dollfus P., Esseni D., et al. (2010). Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks. PISCATAWAY : IEEE.
Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks
FIEGNA, CLAUDIO;SANGIORGI, ENRICO;
2010
Abstract
Abstract—Long–channel effective mobilities as well as transfer characteristics of a 32 nm single–gate SOI and a 16 nm double– gate (DG) MOSFET have been simulated with five different Monte Carlo (MC) device simulators. The differences are mostly rather small for the SOI–FET with quantum effects having a minor effect on threshold voltage due to the lowly doped channel, while the two multi–subband MC simulators show some prominent deviations in the case of the DG–FET. High– mobility degradation by remote phonon scattering (RPS) in free carrier MC approximation leads to smaller performance degradation compared to multi–subband MC with remote Coulomb scattering (RCS) and RPS, but requires further investigations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
