CORNIGLI, DAVIDE
CORNIGLI, DAVIDE
CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"
Characterization and Modeling of BTI in SiC MOSFETs
2019 Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso, C.; Consentino, G.; Crupi, F.
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents
2018 Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture
2018 Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tuncer, E.; Krishnan, S.; Nguyen, L.
TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures
2016 Cornigli, Davide; Monti, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio
Leakage current and breakdown of GaN-on-Silicon vertical structures
2015 Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures
2015 Cornigli, Davide; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Moens, Peter; Vanmeerbeek, Piet; Banerjee, Abhishek; Meneghesso, Gaudenzio
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Characterization and Modeling of BTI in SiC MOSFETs | Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso,... C.; Consentino, G.; Crupi, F. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | 08901761 (1).pdf; combinepdfESSDERC2019.pdf |
| Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents | Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, ...Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu | 2018-01-01 | IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | - | 1.01 Articolo in rivista | Characterization of dielectric properties_accepted_manuscript.pdf |
| Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture | Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tunc...er, E.; Krishnan, S.; Nguyen, L. | 2018-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | Microele_reliability_final_accepted1.pdf |
| TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures | Cornigli, Davide; Monti, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Gi...orgio | 2016-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Leakage current and breakdown of GaN-on-Silicon vertical structures | Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G. | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures | Cornigli, Davide; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Moens, Pet...er; Vanmeerbeek, Piet; Banerjee, Abhishek; Meneghesso, Gaudenzio | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |