CORNIGLI, DAVIDE
 Distribuzione geografica
Continente #
NA - Nord America 583
EU - Europa 239
AS - Asia 165
AF - Africa 18
SA - Sud America 1
Totale 1.006
Nazione #
US - Stati Uniti d'America 581
IT - Italia 69
CN - Cina 61
GB - Regno Unito 49
VN - Vietnam 47
SG - Singapore 36
DE - Germania 22
SE - Svezia 19
BG - Bulgaria 18
IE - Irlanda 16
FR - Francia 11
RU - Federazione Russa 11
CI - Costa d'Avorio 9
IN - India 8
EE - Estonia 6
FI - Finlandia 5
UA - Ucraina 5
ZA - Sudafrica 5
ID - Indonesia 4
TG - Togo 4
CA - Canada 2
HR - Croazia 2
JP - Giappone 2
PK - Pakistan 2
BD - Bangladesh 1
BE - Belgio 1
CH - Svizzera 1
CL - Cile 1
CZ - Repubblica Ceca 1
IR - Iran 1
KR - Corea 1
LV - Lettonia 1
PL - Polonia 1
RS - Serbia 1
SA - Arabia Saudita 1
TW - Taiwan 1
Totale 1.006
Città #
Ann Arbor 203
Fairfield 62
Southend 44
Ashburn 43
Wilmington 36
Singapore 35
Woodbridge 31
Houston 29
Santa Clara 23
Chandler 20
Cambridge 17
Sofia 17
Dublin 16
Seattle 16
Princeton 12
Bologna 11
Nanjing 10
Abidjan 9
Padova 8
Redmond 8
Boardman 7
San Diego 6
Westminster 6
Helsinki 5
Changsha 4
Lomé 4
Shenyang 4
Turin 4
Beijing 3
Fremont 3
Fuzhou 3
Jakarta 3
Lecce 3
Medford 3
Genova 2
Hebei 2
Jiaxing 2
Levanto 2
New York 2
Ningbo 2
Norwalk 2
Nuremberg 2
Rahim Yar Khan 2
Ravenna 2
Saint Petersburg 2
Scordia 2
West Lafayette 2
Apo 1
Avellino 1
Bandung 1
Berlin 1
Biviers 1
Campodarsego 1
Chengdu 1
Chicago 1
Des Moines 1
Dhaka 1
Duncan 1
Esslingen am Neckar 1
Falls Church 1
Grenoble 1
Guangzhou 1
Haikou 1
Hanover 1
Hefei 1
Hounslow 1
Istrana 1
Jacksonville 1
Jinan 1
Kish 1
Kostroma 1
Kunming 1
Lake Forest 1
Las Vegas 1
Nanchang 1
North Las Vegas 1
Ottawa 1
Phoenix 1
Qinhong 1
Riyadh 1
Saluzzo 1
San Giuliano 1
Sant'Agata Feltria 1
Selargius 1
Shijiazhuang 1
Southampton 1
Szczecin 1
Taizhou 1
Tallinn 1
Tianjin 1
Torino 1
Toronto 1
Tsukuba 1
Wenzhou 1
Wuhan 1
Zhengzhou 1
Totale 783
Nome #
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 224
Characterization and Modeling of BTI in SiC MOSFETs 200
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 192
Leakage current and breakdown of GaN-on-Silicon vertical structures 151
TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures 134
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures 130
Totale 1.031
Categoria #
all - tutte 2.361
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.361


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020112 0 0 0 0 0 0 23 32 32 12 11 2
2020/2021228 22 7 31 3 13 7 27 7 10 21 24 56
2021/2022324 13 11 37 32 40 34 37 29 39 14 17 21
2022/2023110 10 6 5 13 10 6 4 3 31 2 15 5
2023/202438 1 7 2 6 2 5 5 2 2 5 0 1
2024/2025105 15 20 13 16 33 8 0 0 0 0 0 0
Totale 1.031