MINJ, ALBERT
MINJ, ALBERT
Mostra
records
Risultati 1 - 8 di 8 (tempo di esecuzione: 0.016 secondi).
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
2020 Cavalcoli D.; Minj A.; Fazio M.A.; Cros A.; Heuken M.
Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy
2019 D Cavalcoli; M.A. Fazio; A Minj
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys
2018 Daniela Cavalcoli, M.A. Fazio, Giovanni Piacentini, Albert Minj, Pierre Ruterana,
Surface properties of AlInGaN/GaN heterostructure
2016 Minj, Albert; Skuridina, D.; Cavalcoli, Daniela; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heuken, M.
Nanocrack-induced leakage current in AlInN/AlN/GaN
2012 A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale
2010 A. Minj; D. Cavalcoli; A. Cavallini
Indium segregation in AlInN/AlN/GaN heterostructures
2010 A Minj; D.Cavalcoli; A.Cavallini
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs
2010 S. Pandey; B. Fraboni; A. Minj; A. Cavallini; H. Behmenburg; C. Giesen; M.Heuken
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage | Cavalcoli D.; Minj A.; Fazio M.A.; Cros A.; Heuken M. | 2020-01-01 | APPLIED SURFACE SCIENCE | - | 1.01 Articolo in rivista | 11585_782792_AAM.pdf |
| Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy |
D Cavalcoli; M.A. Fazio; A Minj |
2019-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Optical and electrical characterization of ternary and quaternary gallium nitride based alloys |
Daniela Cavalcoli, M.A. Fazio, Giovanni Piacentini, Albert Minj, Pierre Ruterana, |
2018-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Surface properties of AlInGaN/GaN heterostructure | Minj, Albert; Skuridina, D.; Cavalcoli, Daniela; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heu...ken, M. | 2016-01-01 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - | 1.01 Articolo in rivista | - |
| Nanocrack-induced leakage current in AlInN/AlN/GaN | A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle | 2012-01-01 | SCRIPTA MATERIALIA | - | 1.01 Articolo in rivista | - |
| Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale | A. Minj; D. Cavalcoli; A. Cavallini | 2010-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |
| Indium segregation in AlInN/AlN/GaN heterostructures | A Minj; D.Cavalcoli; A.Cavallini | 2010-01-01 | APPLIED PHYSICS LETTERS | - | 1.01 Articolo in rivista | - |
| Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs | S. Pandey; B. Fraboni; A. Minj; A. Cavallini; H. Behmenburg; C. Giesen; M.Heuken | 2010-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |