MINJ, ALBERT
MINJ, ALBERT
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Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale
2010 A. Minj; D. Cavalcoli; A. Cavallini
Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy
2019 D Cavalcoli; M.A. Fazio; A Minj
Indium segregation in AlInN/AlN/GaN heterostructures
2010 A Minj; D.Cavalcoli; A.Cavallini
Nanocrack-induced leakage current in AlInN/AlN/GaN
2012 A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys
2018 Daniela Cavalcoli, M.A. Fazio, Giovanni Piacentini, Albert Minj, Pierre Ruterana,
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
2020 Cavalcoli D.; Minj A.; Fazio M.A.; Cros A.; Heuken M.
Surface properties of AlInGaN/GaN heterostructure
2016 Minj, A; Skuridina, D.; Cavalcoli, D.; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heuken, M.
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs
2010 S. Pandey; B. Fraboni; A. Minj; A. Cavallini; H. Behmenburg; C. Giesen; M.Heuken
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale | A. Minj; D. Cavalcoli; A. Cavallini | 2010-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |
| Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy |
D Cavalcoli; M.A. Fazio; A Minj |
2019-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Indium segregation in AlInN/AlN/GaN heterostructures | A Minj; D.Cavalcoli; A.Cavallini | 2010-01-01 | APPLIED PHYSICS LETTERS | - | 1.01 Articolo in rivista | - |
| Nanocrack-induced leakage current in AlInN/AlN/GaN | A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle | 2012-01-01 | SCRIPTA MATERIALIA | - | 1.01 Articolo in rivista | - |
| Optical and electrical characterization of ternary and quaternary gallium nitride based alloys |
Daniela Cavalcoli, M.A. Fazio, Giovanni Piacentini, Albert Minj, Pierre Ruterana, |
2018-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage | Cavalcoli D.; Minj A.; Fazio M.A.; Cros A.; Heuken M. | 2020-01-01 | APPLIED SURFACE SCIENCE | - | 1.01 Articolo in rivista | 11585_782792_AAM.pdf |
| Surface properties of AlInGaN/GaN heterostructure | Minj, A; Skuridina, D.; Cavalcoli, D.; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heuken, M. | 2016-01-01 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - | 1.01 Articolo in rivista | - |
| Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs | S. Pandey; B. Fraboni; A. Minj; A. Cavallini; H. Behmenburg; C. Giesen; M.Heuken | 2010-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |