MINJ, ALBERT

MINJ, ALBERT  

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Risultati 1 - 8 di 8 (tempo di esecuzione: 0.012 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale A. Minj; D. Cavalcoli; A. Cavallini 2010-01-01 - s.n 4.02 Riassunto (Abstract) -
Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy D Cavalcoli;
M.A. Fazio;
A Minj
2019-01-01 - - 4.01 Contributo in Atti di convegno -
Indium segregation in AlInN/AlN/GaN heterostructures A Minj; D.Cavalcoli; A.Cavallini 2010-01-01 APPLIED PHYSICS LETTERS - 1.01 Articolo in rivista -
Nanocrack-induced leakage current in AlInN/AlN/GaN A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle 2012-01-01 SCRIPTA MATERIALIA - 1.01 Articolo in rivista -
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys Daniela Cavalcoli,
M.A. Fazio,
Giovanni Piacentini,
Albert Minj,
Pierre Ruterana,
2018-01-01 - - 4.01 Contributo in Atti di convegno -
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage Cavalcoli D.; Minj A.; Fazio M.A.; Cros A.; Heuken M. 2020-01-01 APPLIED SURFACE SCIENCE - 1.01 Articolo in rivista 11585_782792_AAM.pdf
Surface properties of AlInGaN/GaN heterostructure Minj, A; Skuridina, D.; Cavalcoli, D.; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heuken, M. 2016-01-01 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - 1.01 Articolo in rivista -
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs S. Pandey; B. Fraboni; A. Minj; A. Cavallini; H. Behmenburg; C. Giesen; M.Heuken 2010-01-01 - s.n 4.02 Riassunto (Abstract) -