ABSTRACT In this paper selected applications of Monte Carlo simulation of semi-classical carrier transport are reviewed, including the analysis of quasiballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
Silicon based nano-MOSFET: New materials, new device architectures, and new challenges for device simulation / E.Sangiorgi. - STAMPA. - (2008), pp. 25-29. (Intervento presentato al convegno 26th International Conference on Microelectronics, 2008. MIEL 2008. tenutosi a Nis nel Maggio 2008).
Silicon based nano-MOSFET: New materials, new device architectures, and new challenges for device simulation
SANGIORGI, ENRICO
2008
Abstract
ABSTRACT In this paper selected applications of Monte Carlo simulation of semi-classical carrier transport are reviewed, including the analysis of quasiballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.File in questo prodotto:
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