ABSTRACT In this paper selected applications of Monte Carlo simulation of semi-classical carrier transport are reviewed, including the analysis of quasiballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
Titolo: | Silicon based nano-MOSFET: New materials, new device architectures, and new challenges for device simulation |
Autore/i: | SANGIORGI, ENRICO |
Autore/i Unibo: | |
Anno: | 2008 |
Titolo del libro: | Proceedings of the 26th International Conference on Microelectronics, 2008. MIEL 2008. |
Pagina iniziale: | 25 |
Pagina finale: | 29 |
Abstract: | ABSTRACT In this paper selected applications of Monte Carlo simulation of semi-classical carrier transport are reviewed, including the analysis of quasiballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials. |
Data prodotto definitivo in UGOV: | 24-feb-2011 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.