This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electrothermal simulation and compares Planar Single Gate SOI, Double-Gate SOI and FinFETs. The results of our simulations highlight the main dependences on the structural characteristics of the devices, of the impact of self-heating on electrical performance.
E. Sangiorgi, M. Braccioli, C. Fiegna (2010). Simulation of self-heating effects in different SOI MOS architectures. HOBOKEN, NEW JERSEY : John Wiley & Sons. Inc. - IEEE Press.
Simulation of self-heating effects in different SOI MOS architectures
SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010
Abstract
This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electrothermal simulation and compares Planar Single Gate SOI, Double-Gate SOI and FinFETs. The results of our simulations highlight the main dependences on the structural characteristics of the devices, of the impact of self-heating on electrical performance.File in questo prodotto:
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