This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electrothermal simulation and compares Planar Single Gate SOI, Double-Gate SOI and FinFETs. The results of our simulations highlight the main dependences on the structural characteristics of the devices, of the impact of self-heating on electrical performance.

Simulation of self-heating effects in different SOI MOS architectures

SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010

Abstract

This contribution discusses Self-Heating effects in different SOI MOS architectures by 3-D electrothermal simulation and compares Planar Single Gate SOI, Double-Gate SOI and FinFETs. The results of our simulations highlight the main dependences on the structural characteristics of the devices, of the impact of self-heating on electrical performance.
From Nanophotonics to Sensors to Energy
159
170
E. Sangiorgi; M. Braccioli; C. Fiegna
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/99964
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