This contribution reports the design and preliminary on-wafer characterization of a Ka-band MMIC power amplifier (PA) for an earth observation application using a commercial 100-nm GaN-on-Si technology. Design solutions adopted to deal with constraints and challenges posed by space-grade requirements are discussed in detail. In particular, when adopting a Si substrate, thermal management becomes a major issue, requiring the design to be conceived for low power dissipation. Simulation results of the designed amplifier are in line with the state-of-the-art, with an output power in excess of 10W in the 34 GHz to 37 GHz range, with associated PAE and gain close to 30% and 20 dB, respectively. On-wafer measurements in pulsed conditions confirm the output power capability, but also show some criticisms that need further investigation.
Ramella, C., Florian, C., Del Rocio Garcia Gonzalez, M., Davies, I., Pirola, M., Colantonio, P. (2023). A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications. Piscataway, USA : IEEE [10.1109/INMMIC57329.2023.10321803].
A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications
Florian C.Secondo
;
2023
Abstract
This contribution reports the design and preliminary on-wafer characterization of a Ka-band MMIC power amplifier (PA) for an earth observation application using a commercial 100-nm GaN-on-Si technology. Design solutions adopted to deal with constraints and challenges posed by space-grade requirements are discussed in detail. In particular, when adopting a Si substrate, thermal management becomes a major issue, requiring the design to be conceived for low power dissipation. Simulation results of the designed amplifier are in line with the state-of-the-art, with an output power in excess of 10W in the 34 GHz to 37 GHz range, with associated PAE and gain close to 30% and 20 dB, respectively. On-wafer measurements in pulsed conditions confirm the output power capability, but also show some criticisms that need further investigation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
