The electrical compensation processes of high resistivity CdTe is controlled by deep levels.We have characterized the electrical activity of deep traps by means of three different and complementary spectroscopic methods: photoinduced current transient spectroscopy, surface photovoltage spectroscopy, and space charge limited current analyses. The aim is twofold: to achieve a thorough characterization of the deep trap properties and to assess the potentiality and limitations of the three experimental techniques by a cross correlation of the results obtained with each one of them. We have obtained a direct quantitative estimate of the major deep trap concentration, and we have assessed the sensitivity limit in deep-level detection for surface photovoltage spectroscopy.
Titolo: | Deep states in semi-insulating II-VI compounds: electrical characterization spectroscopies |
Autore/i: | FRABONI, BEATRICE |
Autore/i Unibo: | |
Anno: | 2008 |
Titolo del libro: | Proceedings of the 16th International Conference on Room temperature Semiconductor X and gamma- ray detectors |
Pagina iniziale: | 175 |
Pagina finale: | 177 |
Abstract: | The electrical compensation processes of high resistivity CdTe is controlled by deep levels.We have characterized the electrical activity of deep traps by means of three different and complementary spectroscopic methods: photoinduced current transient spectroscopy, surface photovoltage spectroscopy, and space charge limited current analyses. The aim is twofold: to achieve a thorough characterization of the deep trap properties and to assess the potentiality and limitations of the three experimental techniques by a cross correlation of the results obtained with each one of them. We have obtained a direct quantitative estimate of the major deep trap concentration, and we have assessed the sensitivity limit in deep-level detection for surface photovoltage spectroscopy. |
Data prodotto definitivo in UGOV: | 3-feb-2011 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |