Evidence forr IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form SiGa or TeGa defects. © 1994.
Mendez B., Piqueras J., Cavallini A., Fraboni B. (1994). Study of defects in implanted GaAs: Te by cathodoluminescence. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 24(1-3), 138-140 [10.1016/0921-5107(94)90315-8].
Study of defects in implanted GaAs: Te by cathodoluminescence
Cavallini A.;Fraboni B.
1994
Abstract
Evidence forr IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form SiGa or TeGa defects. © 1994.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
