The diffusion length and surface recombination velocity of the minority carriers are determined from electron beam induced current (EBIC) profiles on a semiconductor containing a barrier perpendicular to the scanned surface. The evaluation of both the parameters has been obtained by the procedure called "of the first moments," due to Donolato [C. Donolato, Appl. Phys. Lett. 43, 120 (1983)], which is based on the calculation of the first moment about the origin of two induced current profiles. This analysis, based on an exact integral property of the EBIC scans, allows evaluation of the diffusion length and the surface recombination without fitting the experimental profiles. In addition, it is easy to handle and can also be readily applied to real devices.
Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments / Cavallini A.; Fraboni B.; Cavalcoli D.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 71:12(1992), pp. 5964-5968. [10.1063/1.350447]
Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments
Cavallini A.Primo
Writing – Review & Editing
;Fraboni B.Secondo
Writing – Original Draft Preparation
;Cavalcoli D.Ultimo
Investigation
1992
Abstract
The diffusion length and surface recombination velocity of the minority carriers are determined from electron beam induced current (EBIC) profiles on a semiconductor containing a barrier perpendicular to the scanned surface. The evaluation of both the parameters has been obtained by the procedure called "of the first moments," due to Donolato [C. Donolato, Appl. Phys. Lett. 43, 120 (1983)], which is based on the calculation of the first moment about the origin of two induced current profiles. This analysis, based on an exact integral property of the EBIC scans, allows evaluation of the diffusion length and the surface recombination without fitting the experimental profiles. In addition, it is easy to handle and can also be readily applied to real devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
