Quantitative electron-beam-induced current measurements on n-type Si have shown injection dose effects both on bulk parameters (diffusion length) and on surface parameters (surface recombination velocity). The experimental findings are discussed on the basis of the Shockley-Read-Hall recombination model. The evaluation of injection dose in the bulk and at the surface of the semiconductor is also discussed. © 1994 Taylor & Francis Group, LLC.
Cavalcoli D., Cavallini A., Fraboni B. (1994). The injection dose effect on the evaluation of bulk and surface parameters in semiconductors. PHILOSOPHICAL MAGAZINE. B. PHYSICS OF CONDENSED MATTER. STRUCTURAL, ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES, 70(5), 1095-1110 [10.1080/01418639408240275].
The injection dose effect on the evaluation of bulk and surface parameters in semiconductors
Cavalcoli D.Primo
Writing – Original Draft Preparation
;Cavallini A.;Fraboni B.Ultimo
1994
Abstract
Quantitative electron-beam-induced current measurements on n-type Si have shown injection dose effects both on bulk parameters (diffusion length) and on surface parameters (surface recombination velocity). The experimental findings are discussed on the basis of the Shockley-Read-Hall recombination model. The evaluation of injection dose in the bulk and at the surface of the semiconductor is also discussed. © 1994 Taylor & Francis Group, LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
