The key processes in an atmospheric-pressure plasma jet containing Ar and tetraethyl orthosilicate (TEOS) are studied by means of two-dimensional imaging of the important discharge radicals: OH, CH, and atomic O. The kinetics of the species generation is investigated by laser-induced fluorescence spectroscopy. The work is focused on the behavior of the ground-state radicals' density as a function of the applied voltage and of the Ar/TEOS mixing ratio. First insights on the physicochemical mechanisms of precursor fragmentation are provided. The influence of precursor admixture and precursor fragmentation on the OH, CH radicals, and atomic oxygen kinetics is revealed. The dominant role of gas-phase oxidation processes in CH radical formation and polymerization is discussed and analyzed.
Barletta F., Britun N., Leys C., Gherardi M., Snyders R., Nikiforov A. (2021). Studying the plasma-assisted polymerization at atmospheric pressure in Ar/TEOS by active laser diagnostics. PLASMA PROCESSES AND POLYMERS, 18(2), 2000149-N/A [10.1002/ppap.202000149].
Studying the plasma-assisted polymerization at atmospheric pressure in Ar/TEOS by active laser diagnostics
Barletta F.;Gherardi M.;
2021
Abstract
The key processes in an atmospheric-pressure plasma jet containing Ar and tetraethyl orthosilicate (TEOS) are studied by means of two-dimensional imaging of the important discharge radicals: OH, CH, and atomic O. The kinetics of the species generation is investigated by laser-induced fluorescence spectroscopy. The work is focused on the behavior of the ground-state radicals' density as a function of the applied voltage and of the Ar/TEOS mixing ratio. First insights on the physicochemical mechanisms of precursor fragmentation are provided. The influence of precursor admixture and precursor fragmentation on the OH, CH radicals, and atomic oxygen kinetics is revealed. The dominant role of gas-phase oxidation processes in CH radical formation and polymerization is discussed and analyzed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
