A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).

Gibiino G.P., Santarelli A., Cignani R., Traverso P.A., Filicori F. (2019). Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 29(9), 598-600 [10.1109/LMWC.2019.2933095].

Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression

Gibiino G. P.;Santarelli A.;Cignani R.;Traverso P. A.;Filicori F.
2019

Abstract

A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).
2019
Gibiino G.P., Santarelli A., Cignani R., Traverso P.A., Filicori F. (2019). Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 29(9), 598-600 [10.1109/LMWC.2019.2933095].
Gibiino G.P.; Santarelli A.; Cignani R.; Traverso P.A.; Filicori F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/708453
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