A low-power source-synchronous multi-Gb/s transceiver is presented. Supply voltage is aggressively scaled to reduce power, and the speed penalty resulting from low-voltage operation is overcome by multiplexing transmitter/receiver synchronized by low-rate multi-phase clocks. Phase spacing errors incurred by device mismatches are corrected using a self-calibration scheme. The proposed phase calibration method uses a single digital DLL to calibrate all the phases, which makes it insensitive to offsets in the calibrating DLL. Fabricated in a 65-nm CMOS process, energy efficiency and data rate of the prototype transceiver vary from 0.29 to 0.58 pJ/bit and 1 to 6 Gb/s, respectively, as the supply voltage changes from 0.45 to 0.7 V.

Choi, W., Shu, G., Talegaonkar, M., Liu, Y., Wei, D.a., Benini, L., et al. (2018). A 0.45-0.7 v 1-6 Gb/s 0.29-0.58 pJ/b Source-Synchronous Transceiver Using Near-Threshold Operation. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 53(3), 884-895 [10.1109/JSSC.2017.2786716].

A 0.45-0.7 v 1-6 Gb/s 0.29-0.58 pJ/b Source-Synchronous Transceiver Using Near-Threshold Operation

Benini, Luca;
2018

Abstract

A low-power source-synchronous multi-Gb/s transceiver is presented. Supply voltage is aggressively scaled to reduce power, and the speed penalty resulting from low-voltage operation is overcome by multiplexing transmitter/receiver synchronized by low-rate multi-phase clocks. Phase spacing errors incurred by device mismatches are corrected using a self-calibration scheme. The proposed phase calibration method uses a single digital DLL to calibrate all the phases, which makes it insensitive to offsets in the calibrating DLL. Fabricated in a 65-nm CMOS process, energy efficiency and data rate of the prototype transceiver vary from 0.29 to 0.58 pJ/bit and 1 to 6 Gb/s, respectively, as the supply voltage changes from 0.45 to 0.7 V.
2018
Choi, W., Shu, G., Talegaonkar, M., Liu, Y., Wei, D.a., Benini, L., et al. (2018). A 0.45-0.7 v 1-6 Gb/s 0.29-0.58 pJ/b Source-Synchronous Transceiver Using Near-Threshold Operation. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 53(3), 884-895 [10.1109/JSSC.2017.2786716].
Choi, Woo-Seok*; Shu, Guanghua; Talegaonkar, Mrunmay; Liu, Yubo; Wei, Da; Benini, Luca; Hanumolu, Pavan Kumar
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/677088
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