In this work we present a reconfigurable impedance matching network for a CMOS Power Amplifier (PA), implemented in MEMS technology. The matching network is based on cascaded LC stages and is synthesized in order to match the PA optimum output load to 50 Ohm at 900 MHz and 1.8 GHz. The MEMS network is implemented in two different ways, both employing switch based variable capacitors and inductors. The technology relies on a surface micromachining process available at the Bruno Kessler Foundation (FBK) in Trento, Italy.

Reconfigurable RF-MEMS Based Impedance Matching Network for a CMOS Power Amplifier

IANNACCI, JACOPO;GNUDI, ANTONIO;
2008

Abstract

In this work we present a reconfigurable impedance matching network for a CMOS Power Amplifier (PA), implemented in MEMS technology. The matching network is based on cascaded LC stages and is synthesized in order to match the PA optimum output load to 50 Ohm at 900 MHz and 1.8 GHz. The MEMS network is implemented in two different ways, both employing switch based variable capacitors and inductors. The technology relies on a surface micromachining process available at the Bruno Kessler Foundation (FBK) in Trento, Italy.
Proc. of the 9th International Symposium on RF MEMS and RF Microsystems MEMSWAVE 2008
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J. Iannacci; A. Gnudi; B. Margesin; F. Giacomozzi; L. Larcher; R. Brama
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/67039
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