In this paper we present an innovative approach to charge-based capacitance measurements (CBCM) and I-V characteristics from the same test structure and, in turn, estimate the channel carrier mobility for both holes and electrons. We discuss the issues that impact the accuracy of capacitance measurements and give guidelines for test key design. Mixed-mode simulations are used to establish the efficacy of the CBCM method. The test structures are designed, fabricated and measured carefully to characterize their C-V and I-V behavior to yield the mobility values from a single NW device.
Sub Femto-Farad Capacitance-Voltage Characteristics of Single Channel Gate-All-Around Nano Wire Transistors for Electrical Characterization of Carrier Transport / H. Zhao; S.C. Rustagi; N. Singh; F.-J. Ma; G.S. Samudra; K.D. Budhaaraju; S.K. Manhas; C.H. Tung; G.Q. Lo; G. Baccarani; D.L. Kwong. - STAMPA. - (2008), pp. 769-772. (Intervento presentato al convegno IEEE International Electron Device Meeting (IEDM 2008) tenutosi a S. Francisco nel 15-17 December 2008).
Sub Femto-Farad Capacitance-Voltage Characteristics of Single Channel Gate-All-Around Nano Wire Transistors for Electrical Characterization of Carrier Transport
BACCARANI, GIORGIO;
2008
Abstract
In this paper we present an innovative approach to charge-based capacitance measurements (CBCM) and I-V characteristics from the same test structure and, in turn, estimate the channel carrier mobility for both holes and electrons. We discuss the issues that impact the accuracy of capacitance measurements and give guidelines for test key design. Mixed-mode simulations are used to establish the efficacy of the CBCM method. The test structures are designed, fabricated and measured carefully to characterize their C-V and I-V behavior to yield the mobility values from a single NW device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
