This article illustrates the basic concepts underlying the operation of non-volatile memories (NVM). After a classification of NVMs based on their functional properties with respect to the programming and erasing operations, the treatment addresses the structure, operation principles, circuit organization and reliability issues of read-only memories (ROM), electrically programmable read-only memories (EPROM), electrically programmable and erasable read-only memories (EEPROM) and flash memories, including both the NOR and NAND organizations. A final section is devoted to non-conventional memories, including magnetic, ferroelectric and phase-change memories, which are still in an early development stage.

Memory Devices: Part II – Non-Volatile Memories / G. BACCARANI; E. GNANI. - STAMPA. - (2005), pp. 1623-1636.

Memory Devices: Part II – Non-Volatile Memories

BACCARANI, GIORGIO;GNANI, ELENA
2005

Abstract

This article illustrates the basic concepts underlying the operation of non-volatile memories (NVM). After a classification of NVMs based on their functional properties with respect to the programming and erasing operations, the treatment addresses the structure, operation principles, circuit organization and reliability issues of read-only memories (ROM), electrically programmable read-only memories (EPROM), electrically programmable and erasable read-only memories (EEPROM) and flash memories, including both the NOR and NAND organizations. A final section is devoted to non-conventional memories, including magnetic, ferroelectric and phase-change memories, which are still in an early development stage.
2005
ENCYCLOPEDIA OF CONDENSED MATTER PHYSICS
1623
1636
Memory Devices: Part II – Non-Volatile Memories / G. BACCARANI; E. GNANI. - STAMPA. - (2005), pp. 1623-1636.
G. BACCARANI; E. GNANI
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/530
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