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EnglishThis article illustrates the basic concepts underlying the operation of non-volatile memories (NVM). After a classification of NVMs based on their functional properties with respect to the programming and erasing operations, the treatment addresses the structure, operation principles, circuit organization and reliability issues of read-only memories (ROM), electrically programmable read-only memories (EPROM), electrically programmable and erasable read-only memories (EEPROM) and flash memories, including both the NOR and NAND organizations. A final section is devoted to non-conventional memories, including magnetic, ferroelectric and phase-change memories, which are still in an early development stage.
| Titolo: | Memory Devices: Part II – Non-Volatile Memories |
| Autore/i: | BACCARANI, GIORGIO; GNANI, ELENA |
| Autore/i Unibo: | |
| Anno: | 2005 |
| Titolo del libro: | ENCYCLOPEDIA OF CONDENSED MATTER PHYSICS |
| Pagina iniziale: | 1623 |
| Pagina finale: | 1636 |
| Abstract: | This article illustrates the basic concepts underlying the operation of non-volatile memories (NVM). After a classification of NVMs based on their functional properties with respect to the programming and erasing operations, the treatment addresses the structure, operation principles, circuit organization and reliability issues of read-only memories (ROM), electrically programmable read-only memories (EPROM), electrically programmable and erasable read-only memories (EEPROM) and flash memories, including both the NOR and NAND organizations. A final section is devoted to non-conventional memories, including magnetic, ferroelectric and phase-change memories, which are still in an early development stage. |
| Data prodotto definitivo in UGOV: | 17-ott-2005 |
| Appare nelle tipologie: | 2.01 Capitolo / saggio in libro |
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