Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic applications. Notwithstanding its wide application as instrinsic layer in solar cells, many issues regarding its electronic and optical properties are not completely understood. The influence of crystal defects and impurities on the physical properties of nc-Si:H is not completely explored yet. The present contribution aims to report on defective states associated with crystal defects and impurities in nc-Si:H films grown by low-energy plasma enhanced chemical vapor deposition (LEPECVD) technique. Electronic levels associated to defect states were investigated by surface photovoltage spectroscopy (SPS) and the role of defects and impurities on the conduction mechanisms at a microscopic level were investigated by conductive atomic force microscopy (C-AFM). The results will be compared with structural analyses.
A. Cavallini, D. Cavalcoli, M. Rossi, A. Tomasi, S. Pizzini, D. Chrastina, et al. (2007). Defect analysis of hydrogenated nanocrystalline Si thin films. PHYSICA. B, CONDENSED MATTER, 401-402, 519-522 [10.1016/j.physb.2007.09.012].
Defect analysis of hydrogenated nanocrystalline Si thin films
CAVALLINI, ANNA;CAVALCOLI, DANIELA;ROSSI, MARCO;
2007
Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic applications. Notwithstanding its wide application as instrinsic layer in solar cells, many issues regarding its electronic and optical properties are not completely understood. The influence of crystal defects and impurities on the physical properties of nc-Si:H is not completely explored yet. The present contribution aims to report on defective states associated with crystal defects and impurities in nc-Si:H films grown by low-energy plasma enhanced chemical vapor deposition (LEPECVD) technique. Electronic levels associated to defect states were investigated by surface photovoltage spectroscopy (SPS) and the role of defects and impurities on the conduction mechanisms at a microscopic level were investigated by conductive atomic force microscopy (C-AFM). The results will be compared with structural analyses.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
