Electrostatic actuated radio frequency microelectromechanical systems (RF–MEMS) switches and variable capacitors are susceptible to issues related to RF actuation or even RF pull-in under large-signal regime. This phenomenon is strictly related to the average RF voltage more than power, and the impedance environment of the device should be fully accounted for. We perform for the first time large-signal time-domain measurements to characterize the RF actuation effect on the real-time capacitance value of a suspended membrane-based RF-MEMS varactor, while controlling the load impedance presented to the device with an active load-pull. The dependence of RF-actuation on both real impedance and inductive admittance is directly extracted, giving strong insights on how power handling should be carefully scrutinized against each specific circuit design.
R. Gaddi, T. Williams, J. Benedikt, P. J. Tasker, F. Giacomozzi, B. Margesin, et al. (2007). Large-Signal Vectorial Load–Pull Characterization of MEMS RF-Actuation. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 17, 903-905 [10.1109/LMWC.2007.908049].
Large-Signal Vectorial Load–Pull Characterization of MEMS RF-Actuation
GADDI, ROBERTO;GNUDI, ANTONIO
2007
Abstract
Electrostatic actuated radio frequency microelectromechanical systems (RF–MEMS) switches and variable capacitors are susceptible to issues related to RF actuation or even RF pull-in under large-signal regime. This phenomenon is strictly related to the average RF voltage more than power, and the impedance environment of the device should be fully accounted for. We perform for the first time large-signal time-domain measurements to characterize the RF actuation effect on the real-time capacitance value of a suspended membrane-based RF-MEMS varactor, while controlling the load impedance presented to the device with an active load-pull. The dependence of RF-actuation on both real impedance and inductive admittance is directly extracted, giving strong insights on how power handling should be carefully scrutinized against each specific circuit design.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
