A time-dependent simulation procedure has been implemented in a state of the art Monte Carlo device simulator that includes quantum corrections and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with LG = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (FT), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.
N. Barin, P. Palestri, C. Fiegna (2007). Monte Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs. SOLID-STATE ELECTRONICS, 51, 604-610 [10.1016/j.sse.2007.02.023].
Monte Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs.
FIEGNA, CLAUDIO
2007
Abstract
A time-dependent simulation procedure has been implemented in a state of the art Monte Carlo device simulator that includes quantum corrections and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with LG = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (FT), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
