A time-dependent simulation procedure has been implemented in a state of the art Monte Carlo device simulator that includes quantum corrections and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with LG = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (FT), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.
Monte Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs / N. Barin; P. Palestri; C. Fiegna. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 51:(2007), pp. 604-610. [10.1016/j.sse.2007.02.023]
Monte Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs.
FIEGNA, CLAUDIO
2007
Abstract
A time-dependent simulation procedure has been implemented in a state of the art Monte Carlo device simulator that includes quantum corrections and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with LG = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (FT), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
