Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT on SiC process. In the frequency band 12.8-14.8 GHz, the LNA features a linear gain over 20 dB with a Noise Figure below 1.85 dB. Input and output return losses are better than -9 dB in the same band. Power dissipation is 840 mW in linear operation. The LNA delivers about 25 dBm of output power at 1 dB compression point and it has been tested to survive without performance degradation 25 dBm of CW input power. © 2013 European Microwave Association.

D. Resca, F. Scappaviva, C. Florian, S. Rochette, J. Muraro, V. D. Giacomo, et al. (2013). A robust Ku-band low noise amplifier using an industrial 0.25-μm AlGaN/GaN on SiC process. London : HORIZON HOUSE PUBLICATIONS INC.

A robust Ku-band low noise amplifier using an industrial 0.25-μm AlGaN/GaN on SiC process

FLORIAN, CORRADO;
2013

Abstract

Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT on SiC process. In the frequency band 12.8-14.8 GHz, the LNA features a linear gain over 20 dB with a Noise Figure below 1.85 dB. Input and output return losses are better than -9 dB in the same band. Power dissipation is 840 mW in linear operation. The LNA delivers about 25 dBm of output power at 1 dB compression point and it has been tested to survive without performance degradation 25 dBm of CW input power. © 2013 European Microwave Association.
2013
Proceedings of the 43rd European Microwave Conference, EuMC 2013
1467
1470
D. Resca, F. Scappaviva, C. Florian, S. Rochette, J. Muraro, V. D. Giacomo, et al. (2013). A robust Ku-band low noise amplifier using an industrial 0.25-μm AlGaN/GaN on SiC process. London : HORIZON HOUSE PUBLICATIONS INC.
D. Resca;F. Scappaviva;C. Florian;S. Rochette;J. Muraro;V. D. Giacomo;C. Chang;D. Baglieri
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/396719
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