Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT on SiC process. In the frequency band 12.8-14.8 GHz, the LNA features a linear gain over 20 dB with a Noise Figure below 1.85 dB. Input and output return losses are better than -9 dB in the same band. Power dissipation is 840 mW in linear operation. The LNA delivers about 25 dBm of output power at 1 dB compression point and it has been tested to survive without performance degradation 25 dBm of CW input power. © 2013 European Microwave Association.

A robust Ku-band low noise amplifier using an industrial 0.25-μm AlGaN/GaN on SiC process / D. Resca;F. Scappaviva;C. Florian;S. Rochette;J. Muraro;V. D. Giacomo;C. Chang;D. Baglieri. - ELETTRONICO. - (2013), pp. 1467-1470. (Intervento presentato al convegno 43rd European Microwave Conference, EuMC 2013 tenutosi a Nuremberg nel 7-10 October 2013).

A robust Ku-band low noise amplifier using an industrial 0.25-μm AlGaN/GaN on SiC process

FLORIAN, CORRADO;
2013

Abstract

Besides the well known outstanding characteristics in terms of power density and thermal behavior, which are largely exploited for microwave high power applications, AlGaN/GaN HEMT technologies have demonstrated promising results for the design of low noise, high-dynamic-range and highly rugged amplifiers. In this paper we describe the design, implementation and characterization of a Ku-band MMIC Low Noise Amplifier for telecom Space applications, exploiting an industrial AlGaN/GaN 0.25 μm HEMT on SiC process. In the frequency band 12.8-14.8 GHz, the LNA features a linear gain over 20 dB with a Noise Figure below 1.85 dB. Input and output return losses are better than -9 dB in the same band. Power dissipation is 840 mW in linear operation. The LNA delivers about 25 dBm of output power at 1 dB compression point and it has been tested to survive without performance degradation 25 dBm of CW input power. © 2013 European Microwave Association.
2013
Proceedings of the 43rd European Microwave Conference, EuMC 2013
1467
1470
A robust Ku-band low noise amplifier using an industrial 0.25-μm AlGaN/GaN on SiC process / D. Resca;F. Scappaviva;C. Florian;S. Rochette;J. Muraro;V. D. Giacomo;C. Chang;D. Baglieri. - ELETTRONICO. - (2013), pp. 1467-1470. (Intervento presentato al convegno 43rd European Microwave Conference, EuMC 2013 tenutosi a Nuremberg nel 7-10 October 2013).
D. Resca;F. Scappaviva;C. Florian;S. Rochette;J. Muraro;V. D. Giacomo;C. Chang;D. Baglieri
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/396719
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