In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degradation, drain-induced barrier lowering, velocity overshoot, and quantum effects. Comparison between the compact model and the advanced transport modeling approaches shows good agreement within the practical range of drain voltages.

Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs

SANGIORGI, ENRICO;
2011

Abstract

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degradation, drain-induced barrier lowering, velocity overshoot, and quantum effects. Comparison between the compact model and the advanced transport modeling approaches shows good agreement within the practical range of drain voltages.
2011
Cheralathan, M.; Iannaccone, G.; Sangiorgi, E.; Iniguez, B.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/354936
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