We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation / T. Cesca; A. Verna; A. Gasparotto; B. Fraboni; G. Impellizzeri; F. Priolo; L. Tarricone;M. Longo. - ELETTRONICO. - (2005). (Intervento presentato al convegno Indium Posphide and related Materials IPRM 2005 tenutosi a Glasgow U.K. nel 18-22 Maggio 2005).
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation
FRABONI, BEATRICE;
2005
Abstract
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.File in questo prodotto:
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