We have studied the electrical activation of the Fe2+/3+ trap in Fe implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+/3+ deep trap, located at EC-0.66 eV. The InP substrate background doping, i.e. the Fermi level position, results to play a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.
Electrical activation of the Fe2+/3+ trap in Fe implanted InP
FRABONI, BEATRICE;
2005
Abstract
We have studied the electrical activation of the Fe2+/3+ trap in Fe implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+/3+ deep trap, located at EC-0.66 eV. The InP substrate background doping, i.e. the Fermi level position, results to play a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.File in questo prodotto:
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