The paper describes the design of class E power amplifiers for SAR space applications, exploiting a 0.35-um pHEMT GaAs process. An L-band 10-Watt push-pull hybrid amplifier has been designed and implemented. The HPA features 73% PAE and 81% drain efficiency at 1.275 GHz. The performances of the class E HPA are also compared with a class AB HPA, exploiting the same technology. Class E design was also evaluated at X band, which for this technology is beyond the limit for the devices' class E operation capability. Two different prototype amplifiers were designed exploiting different device periphery. The single-cell amplifier delivers about 31 dBm output power with 64% peak PAE, whereas the double-cell circuit features 27 dBm output power with 70% peak PAE. These prototype amplifiers prove the possibility to use this process for the design of X band MMIC HPA for SAR space applications operating with high efficiency.

Florian C., Musio A., Scappaviva F., Paganelli R.P., Feudale M. (2011). Design of L and X band class E power amplifiers with GaAs pHEMT technology for space SAR. s.l : IEEE [10.1109/RFM.2011.6168764].

Design of L and X band class E power amplifiers with GaAs pHEMT technology for space SAR

FLORIAN, CORRADO;SCAPPAVIVA, FRANCESCO;PAGANELLI, RUDI PAOLO;
2011

Abstract

The paper describes the design of class E power amplifiers for SAR space applications, exploiting a 0.35-um pHEMT GaAs process. An L-band 10-Watt push-pull hybrid amplifier has been designed and implemented. The HPA features 73% PAE and 81% drain efficiency at 1.275 GHz. The performances of the class E HPA are also compared with a class AB HPA, exploiting the same technology. Class E design was also evaluated at X band, which for this technology is beyond the limit for the devices' class E operation capability. Two different prototype amplifiers were designed exploiting different device periphery. The single-cell amplifier delivers about 31 dBm output power with 64% peak PAE, whereas the double-cell circuit features 27 dBm output power with 70% peak PAE. These prototype amplifiers prove the possibility to use this process for the design of X band MMIC HPA for SAR space applications operating with high efficiency.
2011
Proceedings of 2011 IEEE International RF and Microwave Conference (RFM)
347
350
Florian C., Musio A., Scappaviva F., Paganelli R.P., Feudale M. (2011). Design of L and X band class E power amplifiers with GaAs pHEMT technology for space SAR. s.l : IEEE [10.1109/RFM.2011.6168764].
Florian C.; Musio A.; Scappaviva F.; Paganelli R.P.; Feudale M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/117805
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