The chip-set for the transmitting power lineup of satellite SAR antenna T/R modules has been designed and implemented exploiting a 2- μm GaInP-GaAs heterojunction bipolar transistor (HBT) technology suitable for space applications. The HBT technology features an integrated emitter ballast resistor that enables high-power density operation without suffering thermal runaway phenomena. Two monolithic microwave integrated circuit (MMIC) driver amplifiers and a MMIC HPA are described: the drivers exhibit small-signal gains exceeding 21 dB and P1 dB output power of about 28 and 29 dBm, respectively, in a 2-GHz bandwidth and CW condition. The HPA delivers more than 40-dBm power at about 2.5-dB gain compression and power-added efficiency (PAE) exceeding 36% in a 700-MHz bandwidth in pulsed operation. Its peak performance at the center of the band are 40.9-dBm output power and 45% PAE. These performance are obtained within tight de-rating conditions for space applications.

C. Florian, R.P. Paganelli, J.A. Lonac (2012). 12-W X-Band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 60, issue 6, part 2, 1805-1816 [10.1109/TMTT.2012.2189234].

12-W X-Band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules

FLORIAN, CORRADO;PAGANELLI, RUDI PAOLO;
2012

Abstract

The chip-set for the transmitting power lineup of satellite SAR antenna T/R modules has been designed and implemented exploiting a 2- μm GaInP-GaAs heterojunction bipolar transistor (HBT) technology suitable for space applications. The HBT technology features an integrated emitter ballast resistor that enables high-power density operation without suffering thermal runaway phenomena. Two monolithic microwave integrated circuit (MMIC) driver amplifiers and a MMIC HPA are described: the drivers exhibit small-signal gains exceeding 21 dB and P1 dB output power of about 28 and 29 dBm, respectively, in a 2-GHz bandwidth and CW condition. The HPA delivers more than 40-dBm power at about 2.5-dB gain compression and power-added efficiency (PAE) exceeding 36% in a 700-MHz bandwidth in pulsed operation. Its peak performance at the center of the band are 40.9-dBm output power and 45% PAE. These performance are obtained within tight de-rating conditions for space applications.
2012
C. Florian, R.P. Paganelli, J.A. Lonac (2012). 12-W X-Band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 60, issue 6, part 2, 1805-1816 [10.1109/TMTT.2012.2189234].
C. Florian; R.P. Paganelli; J.A. Lonac
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/117788
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