In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.
S. Pandey, D. Cavalcoli, B. Fraboni, A. Cavallini, T. Brazzini, F Calle (2012). Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures. APPLIED PHYSICS LETTERS, 100, 152116-152120 [10.1063/1.4720077].
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
CAVALCOLI, DANIELA;FRABONI, BEATRICE;CAVALLINI, ANNA;
2012
Abstract
In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
