An extensive simulation analysis of siliconnanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.
L. Silvestri, S. Reggiani, V. Passi F. Ravaux, E. Dubois, J. Raskin, S. Clavaguera, et al. (2011). TCAD Study of the Detection Mechanisms in Silicon Nanoribbon-Based Gas Sensors. PISCATAWAY, NJ : IEEE [10.1109/ESSDERC.2011.6044217].
TCAD Study of the Detection Mechanisms in Silicon Nanoribbon-Based Gas Sensors
REGGIANI, SUSANNA;
2011
Abstract
An extensive simulation analysis of siliconnanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
