Hole spins in semiconductor quantum dots are a promising path to implement electrically controlled qubits. This work compares different geometries of hole spin qubits implemented in SOI quantum dots with different nanowire orientations. The goal is to optimize geometry and nanowire orientation to maximize the Rabi frequency for a given RF drive amplitude, based on the theory in Venitucci et al. (2018). The hole eigenfunctions are calculated using the k⋅p model within a COMSOL-based framework. The g-matrix formalism is exploited to compute Rabi frequency as a function of the magnetic field orientation.
Raschi, L., Gnudi, A. (2025). Simulation of hole spin qubits in SOI quantum dots: Comparison between different geometries. SOLID-STATE ELECTRONICS, 229, 1-4 [10.1016/j.sse.2025.109201].
Simulation of hole spin qubits in SOI quantum dots: Comparison between different geometries
Raschi, Lorenzo;Gnudi, Antonio
2025
Abstract
Hole spins in semiconductor quantum dots are a promising path to implement electrically controlled qubits. This work compares different geometries of hole spin qubits implemented in SOI quantum dots with different nanowire orientations. The goal is to optimize geometry and nanowire orientation to maximize the Rabi frequency for a given RF drive amplitude, based on the theory in Venitucci et al. (2018). The hole eigenfunctions are calculated using the k⋅p model within a COMSOL-based framework. The g-matrix formalism is exploited to compute Rabi frequency as a function of the magnetic field orientation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
