A framework for the simulation of hole spin qubits based on COMSOL Multiphysics is presented. The tool solves the coupled Poisson and Schrӧdinger equations in the four-bands k⋅p Hamiltonian including the effects of a static magnetic field B. The gyromagnetic matrix g and its derivative g’ with respect to the gate voltage are calculated from the wavefunctions at zero magnetic field. The matrices g and g’ allow for the computation of the Rabi frequency as a function of the magnetic field to first order in the magnetic field and in the gate voltage. Results for a qubit hosted in a silicon nanowire fabricated in SOI technology are presented. Solutions for different gate geometries are compared.
Raschi, L., Gnudi, A. (2025). Simulation Framework for Hole Spin Qubits. Springer Science and Business Media Deutschland GmbH [10.1007/978-3-031-71518-1_11].
Simulation Framework for Hole Spin Qubits
Raschi, Lorenzo;Gnudi, Antonio
2025
Abstract
A framework for the simulation of hole spin qubits based on COMSOL Multiphysics is presented. The tool solves the coupled Poisson and Schrӧdinger equations in the four-bands k⋅p Hamiltonian including the effects of a static magnetic field B. The gyromagnetic matrix g and its derivative g’ with respect to the gate voltage are calculated from the wavefunctions at zero magnetic field. The matrices g and g’ allow for the computation of the Rabi frequency as a function of the magnetic field to first order in the magnetic field and in the gate voltage. Results for a qubit hosted in a silicon nanowire fabricated in SOI technology are presented. Solutions for different gate geometries are compared.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
