The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 × 1013 or 2 × 1014 at cm-2 and subsequently annealed at the maximum temperature of 750°C has been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is only partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic stacking fault tetrahedra. At high implantation dose the as-implanted layer is amorphous and upon annealing only an imperfect solid phase epitaxial regrowth is achieved as a heavily twinned band remains. Below this band extrinsic end of range dislocation loops were detected. The origin of these defects is discussed. © 1997 Elsevier Science S.A.
Frigeri, C., Carnera, A., Fraboni, B., Gasparotto, A., Cassa, A., Priolo, F., et al. (1997). Defect characterization in InP substrates implanted with 2 MeV Fe ions. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 44(1-3), 193-197 [10.1016/S0921-5107(96)01753-9].
Defect characterization in InP substrates implanted with 2 MeV Fe ions
Fraboni B.;
1997
Abstract
The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of either 5 × 1013 or 2 × 1014 at cm-2 and subsequently annealed at the maximum temperature of 750°C has been studied by TEM. The defect structure is very similar for both types of substrate. For the low dose case the as-implanted sample is only partially amorphised and after annealing the primary damage layer is replaced by a band of extrinsic dislocation loops and intrinsic stacking fault tetrahedra. At high implantation dose the as-implanted layer is amorphous and upon annealing only an imperfect solid phase epitaxial regrowth is achieved as a heavily twinned band remains. Below this band extrinsic end of range dislocation loops were detected. The origin of these defects is discussed. © 1997 Elsevier Science S.A.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
