The Fe-related properties in high-temperature Fe implanted and annealed InP were studied by means of PIXE-RBS-channeling and correlated with the results of electrical (current-voltage) measurements. It is found that the point defect mobility, the concentration of substitutional Fe, and the resistivity of the implanted layer, all follow a similar temperature behavior. For annealing temperatures higher than 500°C semi-insulating behavior controlled by the Fe2+ deep levels is observed. © 2003 Elsevier B.V. All rights reserved.

Gasparotto, A., Cesca, T., Fraboni, B., Priolo, F. (2003). Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP. PHYSICA. B, CONDENSED MATTER, 340-342, 403-406 [10.1016/j.physb.2003.09.021].

Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP

Fraboni B.;
2003

Abstract

The Fe-related properties in high-temperature Fe implanted and annealed InP were studied by means of PIXE-RBS-channeling and correlated with the results of electrical (current-voltage) measurements. It is found that the point defect mobility, the concentration of substitutional Fe, and the resistivity of the implanted layer, all follow a similar temperature behavior. For annealing temperatures higher than 500°C semi-insulating behavior controlled by the Fe2+ deep levels is observed. © 2003 Elsevier B.V. All rights reserved.
2003
Gasparotto, A., Cesca, T., Fraboni, B., Priolo, F. (2003). Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP. PHYSICA. B, CONDENSED MATTER, 340-342, 403-406 [10.1016/j.physb.2003.09.021].
Gasparotto, A.; Cesca, T.; Fraboni, B.; Priolo, F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/1001736
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