A careful analysis of the features of the spectroscopic properties of Er-doped and undoped epitaxial silicon films grown by liquid-phase epitaxy at 950 °C in silicon-saturated indium melts shows that threading dislocations work as effective gettering sites for erbium and oxygen. The last impurity is incorporated in the epitaxial film by back diffusion from the Czochralski substrate during the growth. The photoluminescence emitted by these films appears to be related to the dislocation and is enforced by the presence of erbium-oxygen complexes. © 1999 American Institute of Physics.
Binetti, S., Pizzini, S., Cavallini, A., Fraboni, B. (1999). Erbium-doped silicon epilayers grown by liquid-phase epitaxy. SEMICONDUCTORS, 33(6), 596-597 [10.1134/1.1187762].
Erbium-doped silicon epilayers grown by liquid-phase epitaxy
Cavallini A.;Fraboni B.
1999
Abstract
A careful analysis of the features of the spectroscopic properties of Er-doped and undoped epitaxial silicon films grown by liquid-phase epitaxy at 950 °C in silicon-saturated indium melts shows that threading dislocations work as effective gettering sites for erbium and oxygen. The last impurity is incorporated in the epitaxial film by back diffusion from the Czochralski substrate during the growth. The photoluminescence emitted by these films appears to be related to the dislocation and is enforced by the presence of erbium-oxygen complexes. © 1999 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
