High temperature (>200°C) Fe implantation in InP has been proved to be a suitable method to obtain high substitutional Fe concentrations ([Fe2+]>1018 cm-3), without substantial defect generation and Fe precipitation. Electrical (current-voltage), deep level (photo-induced current transient spectroscopy) and optical (photoluminescence) measurements have been used to assess the behaviour of the activated Fe fraction, which is compared with the total Fe concentration evaluated by secondary ion mass spectrometry. Our results show no detrimental effects on the electrical (and optical) Fe related properties for Fe peak concentrations as high as 2 × 1019 cm-3, in spite of a large inactive Fe fraction. A strong correlation between Fe activation and background n-doping concentration has been put in evidence. © 2001 Elsevier Science B.V.
Fraboni, B., Gasparotto, A., Cesca, T., Priolo, F., Scamarcio, G., Mazzone, A., et al. (2001). High Fe solubility in InP by high temperature ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 178(1-4), 275-278 [10.1016/S0168-583X(00)00477-8].
High Fe solubility in InP by high temperature ion implantation
Fraboni B.;
2001
Abstract
High temperature (>200°C) Fe implantation in InP has been proved to be a suitable method to obtain high substitutional Fe concentrations ([Fe2+]>1018 cm-3), without substantial defect generation and Fe precipitation. Electrical (current-voltage), deep level (photo-induced current transient spectroscopy) and optical (photoluminescence) measurements have been used to assess the behaviour of the activated Fe fraction, which is compared with the total Fe concentration evaluated by secondary ion mass spectrometry. Our results show no detrimental effects on the electrical (and optical) Fe related properties for Fe peak concentrations as high as 2 × 1019 cm-3, in spite of a large inactive Fe fraction. A strong correlation between Fe activation and background n-doping concentration has been put in evidence. © 2001 Elsevier Science B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
