MeV implantation of iron in n-doped InP at elevated temperature was investigated, in order to determine the Fe lattice location and to study the electrical activation of Fe as compensating deep acceptor. Proton induced X-ray Emission (PIXE) and Rutherford Backscattering (RBS) were used for determination of the lattice location by performing angular scans across major crystal directions, whereas Secondary Ions Mass Spectrometry (SIMS) was employed for Fe depth profiling. Current-voltage characteristics were measured to determine the resistivity of the implanted layers. Despite the low substitutional Fe fraction present after the annealing, the implanted samples show a high resistive behaviour, demonstrating the possibility to compensate an initial doping level of the order of 1018 cm-3. © 1999 Elsevier Science B.V. All rights reserved.
Gasparotto, A., Carnera, A., Paccagnella, A., Fraboni, B., Priolo, F., Gombia, E., et al. (1999). Semi-insulating behaviour in Fe MeV implanted n-type InP. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 148(1-4), 411-415 [10.1016/S0168-583X(98)00701-0].
Semi-insulating behaviour in Fe MeV implanted n-type InP
Fraboni B.;
1999
Abstract
MeV implantation of iron in n-doped InP at elevated temperature was investigated, in order to determine the Fe lattice location and to study the electrical activation of Fe as compensating deep acceptor. Proton induced X-ray Emission (PIXE) and Rutherford Backscattering (RBS) were used for determination of the lattice location by performing angular scans across major crystal directions, whereas Secondary Ions Mass Spectrometry (SIMS) was employed for Fe depth profiling. Current-voltage characteristics were measured to determine the resistivity of the implanted layers. Despite the low substitutional Fe fraction present after the annealing, the implanted samples show a high resistive behaviour, demonstrating the possibility to compensate an initial doping level of the order of 1018 cm-3. © 1999 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
