Mid-infrared electroluminescence associated with internal transitions of Fe2+ deep levels in semi-insulating InP:Fe layers, obtained by ion implantation at high doses in the range 1013-1015 cm-2, is reported. The characteristic line spectrum corresponding to the symmetry-allowed d-shell transitions of Fe2+ can be observed up to 30 K, while a broader band emission is detectable up to 200 K. The estimated conversion efficiency of electrical into mid-IR optical power is approx. 4 × 10-5, a factor of approx. 40 larger than previously reported values in MOCVD-grown planar electroluminescent devices.
Troccoli, M., Scamarcio, G., Fraboni, B., Priolo, F., Gasparotto, A. (2001). Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 16(1), 1-3 [10.1088/0268-1242/16/1/101].
Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe
Fraboni B.;
2001
Abstract
Mid-infrared electroluminescence associated with internal transitions of Fe2+ deep levels in semi-insulating InP:Fe layers, obtained by ion implantation at high doses in the range 1013-1015 cm-2, is reported. The characteristic line spectrum corresponding to the symmetry-allowed d-shell transitions of Fe2+ can be observed up to 30 K, while a broader band emission is detectable up to 200 K. The estimated conversion efficiency of electrical into mid-IR optical power is approx. 4 × 10-5, a factor of approx. 40 larger than previously reported values in MOCVD-grown planar electroluminescent devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
