We report the fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using Focused Ion Beam (FIB) implanted gates. Low temperature electrical measurements have been carried out and, for the point contact devices, ballistic transport is evident by the appearance of two quantized conductance plateaux. Imaging of the implants using Electron Beam Induced Current (EBIC) contrast in a Scanning Electron Microscope (SEM) is also reported. © 1991.

Blaikie, R.J., Nakazato, K., Fraboni, B., Hasko, D.G., Cleaver, J.R.A., Ahmed, H. (1991). Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates. MICROELECTRONIC ENGINEERING, 13(1-4), 373-376 [10.1016/0167-9317(91)90114-S].

Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates

Fraboni B.;
1991

Abstract

We report the fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using Focused Ion Beam (FIB) implanted gates. Low temperature electrical measurements have been carried out and, for the point contact devices, ballistic transport is evident by the appearance of two quantized conductance plateaux. Imaging of the implants using Electron Beam Induced Current (EBIC) contrast in a Scanning Electron Microscope (SEM) is also reported. © 1991.
1991
Blaikie, R.J., Nakazato, K., Fraboni, B., Hasko, D.G., Cleaver, J.R.A., Ahmed, H. (1991). Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates. MICROELECTRONIC ENGINEERING, 13(1-4), 373-376 [10.1016/0167-9317(91)90114-S].
Blaikie, R. J.; Nakazato, K.; Fraboni, B.; Hasko, D. G.; Cleaver, J. R. A.; Ahmed, H.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/1001722
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