We have carried out deep level transient spectroscopy (DLTS), optical DLTS, and capacitance-voltage measurements on liquid phase epitaxy-grown Er-doped Si to characterize the deep levels present in the material and to identify those related to dislocations and involved in the luminescence activity. The optical properties of the material have been studied by photoluminescence, cathodoluminescence investigations, and two emission lines, labeled A and B, have been found, line A being located at 0.806 eV. We have observed that an actual interaction occurs between dislocations and Er-related emitting centers. © 1999 American Institute of Physics.
Cavallini, A., Fraboni, B., Pizzini, S., Binetti, S., Sanguinetti, S., Lazzarini, L., et al. (1999). Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy. JOURNAL OF APPLIED PHYSICS, 85(3), 1582-1586 [10.1063/1.369289].
Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy
Cavallini A.;Fraboni B.;
1999
Abstract
We have carried out deep level transient spectroscopy (DLTS), optical DLTS, and capacitance-voltage measurements on liquid phase epitaxy-grown Er-doped Si to characterize the deep levels present in the material and to identify those related to dislocations and involved in the luminescence activity. The optical properties of the material have been studied by photoluminescence, cathodoluminescence investigations, and two emission lines, labeled A and B, have been found, line A being located at 0.806 eV. We have observed that an actual interaction occurs between dislocations and Er-related emitting centers. © 1999 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
