TEM and SIMS analyses of InP submitted to single and double implantation have allowed to establish that the end of range (EOR) dislocation loops, mostly of the Frank type, are efficient gettering sites for the implanted Fe dopant. The gettering rate increases with increasing annealing temperature, due to both increased Fe mobility and loop coarsening. Besides the EOR loops, other extended defects, e.g. the tangled networks of dislocations at the interfaces of bands of twins, are seen to getter Fe. Such gettering strongly affects the diffusion of Fe upon annealing.
Frigeri, C., Carnera, A., Gasparotto, A., Priolo, F., Fraboni, B., Camporese, A., et al. (1999). Gettering of Fe at the end of range loops in Fe-implanted InP. PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH, 171(1), 209-214 [10.1002/(SICI)1521-396X(199901)171:1<209::AID-PSSA209>3.0.CO;2-Y].
Gettering of Fe at the end of range loops in Fe-implanted InP
Fraboni B.;
1999
Abstract
TEM and SIMS analyses of InP submitted to single and double implantation have allowed to establish that the end of range (EOR) dislocation loops, mostly of the Frank type, are efficient gettering sites for the implanted Fe dopant. The gettering rate increases with increasing annealing temperature, due to both increased Fe mobility and loop coarsening. Besides the EOR loops, other extended defects, e.g. the tangled networks of dislocations at the interfaces of bands of twins, are seen to getter Fe. Such gettering strongly affects the diffusion of Fe upon annealing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
