UBALDI, FILIPPO
UBALDI, FILIPPO
DIP. DI FISICA
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Risultati 1 - 7 di 7 (tempo di esecuzione: 0.028 secondi).
Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography
2010 Ubaldi F.; Pozzi G.; Kasama T.; McCartney M.R.; Newcomb S.B.; Dunin-Borkowski R.E.
Three-dimensional field models for reverse-biased p-n junctions.
2008 F. Ubaldi; G. Pozzi; P.F. Fazzini; M. Beleggia
Interference electron microscopy of one-dimensional electron-optical phase objects.
2006 P. F. Fazzini; L. Ortolani; G. Pozzi; F. Ubaldi
Towards three-dimensional field models for reverse biased p-n junctions.
2006 P. F. Fazzini; G. Pozzi; F. Ubaldi; M. Beleggia
Effects of beam-specimen interaction on the observation of reverse-biased junction
2005 P. F. Fazzini; P. G. Merli; G.Pozzi; F. Ubaldi
Influence of the dopant profile on the phase contrast images of reverse biased p-n junctions
2005 P. F. Fazzini; G. Pozzi; F. Ubaldi
Interference electron microscopy of reverse-biased p-n junctions
2005 P. F. Fazzini; P. G. Merli; G. Pozzi; F. Ubaldi
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography | Ubaldi F.; Pozzi G.; Kasama T.; McCartney M.R.; Newcomb S.B.; Dunin-Borkowski R.E. | 2010-01-01 | - | IOP Publishing | 4.01 Contributo in Atti di convegno | - |
| Three-dimensional field models for reverse-biased p-n junctions. | F. Ubaldi; G. Pozzi; P.F. Fazzini; M. Beleggia | 2008-01-01 | - | Springer | 4.02 Riassunto (Abstract) | - |
| Interference electron microscopy of one-dimensional electron-optical phase objects. | P. F. Fazzini; L. Ortolani; G. Pozzi; F. Ubaldi | 2006-01-01 | ULTRAMICROSCOPY | - | 1.01 Articolo in rivista | - |
| Towards three-dimensional field models for reverse biased p-n junctions. | P. F. Fazzini; G. Pozzi; F. Ubaldi; M. Beleggia | 2006-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |
| Effects of beam-specimen interaction on the observation of reverse-biased junction | P. F. Fazzini; P. G. Merli; G.Pozzi; F. Ubaldi | 2005-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| Influence of the dopant profile on the phase contrast images of reverse biased p-n junctions | P. F. Fazzini; G. Pozzi; F. Ubaldi | 2005-01-01 | - | Slovene Society for Microscopy | 4.02 Riassunto (Abstract) | - |
| Interference electron microscopy of reverse-biased p-n junctions | P. F. Fazzini; P. G. Merli; G. Pozzi; F. Ubaldi | 2005-01-01 | - | Springer | 4.02 Riassunto (Abstract) | - |