The focus of the presented research is to investigate the potential use of low energy ion implantation in the reduction and control of the degradation of organic semiconducting materials employed as active layers in organic-based devices exposed to atmosphere. We show how, by properly selecting the ion type, energy and dose, the functionality of implanted devices is fully preserved and the device lifetime is greatly extended. In particular, implantation with ions that chemically interact with the organic matrix leads to the formation of stable charged chemical species that directly, and most importantly, predictably affect the charge transport behavior of the material.

Ion irradiation effects on the transport properties and degradation mechanisms of organic thin film transistors / B.Fraboni. - STAMPA. - (2010), pp. 57-58. (Intervento presentato al convegno XCVI Convegno della Società Italiana di Fisica (SIF) tenutosi a Bologna nel Settembre 2010).

Ion irradiation effects on the transport properties and degradation mechanisms of organic thin film transistors

FRABONI, BEATRICE
2010

Abstract

The focus of the presented research is to investigate the potential use of low energy ion implantation in the reduction and control of the degradation of organic semiconducting materials employed as active layers in organic-based devices exposed to atmosphere. We show how, by properly selecting the ion type, energy and dose, the functionality of implanted devices is fully preserved and the device lifetime is greatly extended. In particular, implantation with ions that chemically interact with the organic matrix leads to the formation of stable charged chemical species that directly, and most importantly, predictably affect the charge transport behavior of the material.
2010
Atti del XCVI Convegno della Società Italiana di Fisica (SIF)
57
58
Ion irradiation effects on the transport properties and degradation mechanisms of organic thin film transistors / B.Fraboni. - STAMPA. - (2010), pp. 57-58. (Intervento presentato al convegno XCVI Convegno della Società Italiana di Fisica (SIF) tenutosi a Bologna nel Settembre 2010).
B.Fraboni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/97065
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