The focus of the presented research is to investigate the potential use of low energy ion implantation in the reduction and control of the degradation of organic semiconducting materials employed as active layers in organic-based devices exposed to atmosphere. We show how, by properly selecting the ion type, energy and dose, the functionality of implanted devices is fully preserved and the device lifetime is greatly extended. In particular, implantation with ions that chemically interact with the organic matrix leads to the formation of stable charged chemical species that directly, and most importantly, predictably affect the charge transport behavior of the material.
B.Fraboni (2010). Ion irradiation effects on the transport properties and degradation mechanisms of organic thin film transistors. BOLOGNA : s.n.
Ion irradiation effects on the transport properties and degradation mechanisms of organic thin film transistors
FRABONI, BEATRICE
2010
Abstract
The focus of the presented research is to investigate the potential use of low energy ion implantation in the reduction and control of the degradation of organic semiconducting materials employed as active layers in organic-based devices exposed to atmosphere. We show how, by properly selecting the ion type, energy and dose, the functionality of implanted devices is fully preserved and the device lifetime is greatly extended. In particular, implantation with ions that chemically interact with the organic matrix leads to the formation of stable charged chemical species that directly, and most importantly, predictably affect the charge transport behavior of the material.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.