The goal of the research projectis the achievement of lifetime-enhancing effects induced on organic semiconductor FETs by a controlled low-energy ion implantation. Previously obtained results on ion irradiation of polymers, showed that a controlled damage induced by the implanted ions can induce strong chemical and structural modifications of the material, altering its mechanical and electrical properties. However, the effects of ion implantation have never been investigated neither on small molecule organic semiconductors, such as pentacene, widely studied thanks to its excellent transport performance, nor on fully operating organic devices. These effects will concern the main transport parameters of the material and of the device, such as its carrier mobility and threshold voltage. The research that we have carried out in the last two years, in collaboration with CINT suggests that, by accurately controlling the ion energy and dose, it is possible to limit the ion penetration and action to the upper part of the semiconducting film, therefore preserving the device channel and its full operational properties.These experiments will be carried out in collaboration with M. Nastasi’s research group at the Center for Nanoscale Integration (CINT) of the Los Alamos Laboratory (U.S.A.)

Stabilization of OTFTs by ion implantation

FRABONI, BEATRICE
2010

Abstract

The goal of the research projectis the achievement of lifetime-enhancing effects induced on organic semiconductor FETs by a controlled low-energy ion implantation. Previously obtained results on ion irradiation of polymers, showed that a controlled damage induced by the implanted ions can induce strong chemical and structural modifications of the material, altering its mechanical and electrical properties. However, the effects of ion implantation have never been investigated neither on small molecule organic semiconductors, such as pentacene, widely studied thanks to its excellent transport performance, nor on fully operating organic devices. These effects will concern the main transport parameters of the material and of the device, such as its carrier mobility and threshold voltage. The research that we have carried out in the last two years, in collaboration with CINT suggests that, by accurately controlling the ion energy and dose, it is possible to limit the ion penetration and action to the upper part of the semiconducting film, therefore preserving the device channel and its full operational properties.These experiments will be carried out in collaboration with M. Nastasi’s research group at the Center for Nanoscale Integration (CINT) of the Los Alamos Laboratory (U.S.A.)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/97060
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