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EnglishIn this work we present a novel implementation of a multi-state RF (Radio Frequency) power attenuator, entirely realized in MEMS (MicroElectroMechanical-Systems) technology. The network, based on a CPW (Coplanar Waveguide) structure and fabricated in FBK technology, features several resistors realized with an highly-doped poly-silicon layer. Each resistor can load the RF line or can be shorted, depending on the state (actuated/not-actuated) of electrostatically controlled suspended-membrane-based MEMS switches. The network realizes 128 attenuation levels with flat characteristics over broad frequency ranges. The network features two sections, namely a series and a parallel one, that are experimentally characterized in a few of the possible configurations up to 30 GHz and simulated within CSTTM Microwave Studio. After validating the simulated results for the two sections, simulated results of the whole RF-MEMS-based power attenuator are presented and discussed.
| Titolo: | A MEMS-based Wide-Band Multi-State Power Attenuator for Radio Frequency and Microwave Applications |
| Autore/i: | J. Iannacci; A. Faes; MASTRI, FRANCO; MASOTTI, DIEGO; RIZZOLI, VITTORIO |
| Autore/i Unibo: | |
| Anno: | 2010 |
| Titolo del libro: | Proceedings of TechConnect World, NSTI Nanotech 2010 |
| Pagina iniziale: | 328 |
| Pagina finale: | 331 |
| Abstract: | In this work we present a novel implementation of a multi-state RF (Radio Frequency) power attenuator, entirely realized in MEMS (MicroElectroMechanical-Systems) technology. The network, based on a CPW (Coplanar Waveguide) structure and fabricated in FBK technology, features several resistors realized with an highly-doped poly-silicon layer. Each resistor can load the RF line or can be shorted, depending on the state (actuated/not-actuated) of electrostatically controlled suspended-membrane-based MEMS switches. The network realizes 128 attenuation levels with flat characteristics over broad frequency ranges. The network features two sections, namely a series and a parallel one, that are experimentally characterized in a few of the possible configurations up to 30 GHz and simulated within CSTTM Microwave Studio. After validating the simulated results for the two sections, simulated results of the whole RF-MEMS-based power attenuator are presented and discussed. |
| Data prodotto definitivo in UGOV: | 23-feb-2011 |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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