In this work we present a novel implementation of a multi-state RF (Radio Frequency) power attenuator, entirely realized in MEMS (MicroElectroMechanical-Systems) technology. The network, based on a CPW (Coplanar Waveguide) structure and fabricated in FBK technology, features several resistors realized with an highly-doped poly-silicon layer. Each resistor can load the RF line or can be shorted, depending on the state (actuated/not-actuated) of electrostatically controlled suspended-membrane-based MEMS switches. The network realizes 128 attenuation levels with flat characteristics over broad frequency ranges. The network features two sections, namely a series and a parallel one, that are experimentally characterized in a few of the possible configurations up to 30 GHz and simulated within CSTTM Microwave Studio. After validating the simulated results for the two sections, simulated results of the whole RF-MEMS-based power attenuator are presented and discussed.
J. Iannacci, A. Faes, F. Mastri, D. Masotti, V. Rizzoli (2010). A MEMS-based Wide-Band Multi-State Power Attenuator for Radio Frequency and Microwave Applications. BOCA RATON (FL) : CRC press.
A MEMS-based Wide-Band Multi-State Power Attenuator for Radio Frequency and Microwave Applications
MASTRI, FRANCO;MASOTTI, DIEGO;RIZZOLI, VITTORIO
2010
Abstract
In this work we present a novel implementation of a multi-state RF (Radio Frequency) power attenuator, entirely realized in MEMS (MicroElectroMechanical-Systems) technology. The network, based on a CPW (Coplanar Waveguide) structure and fabricated in FBK technology, features several resistors realized with an highly-doped poly-silicon layer. Each resistor can load the RF line or can be shorted, depending on the state (actuated/not-actuated) of electrostatically controlled suspended-membrane-based MEMS switches. The network realizes 128 attenuation levels with flat characteristics over broad frequency ranges. The network features two sections, namely a series and a parallel one, that are experimentally characterized in a few of the possible configurations up to 30 GHz and simulated within CSTTM Microwave Studio. After validating the simulated results for the two sections, simulated results of the whole RF-MEMS-based power attenuator are presented and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
