In this paper we report on the characterization of SiPM tiles developed for the R&D on the DUNE Photon Detection System. The tiles were produced by Fondazione Bruno Kessler (FBK) employing Near Ultra-Violet High Density Standard Field (NUV-HD-SF) SiPMs. Special emphasis is given on cryo-reliability of the sensors, i.e. the stability of electric and mechanical properties after thermal cycles at room and 77 K temperature. The characterization includes the determination of the I-V curve, a high sensitivity measurement of Dark Count Rate at different overvoltages, and correlated noise. The single p.e. sensitivity is measured as a function of the number of sensors connected to a single electronic channel, after amplification at 77 K using a dedicated cold amplifier.
Cryogenic SiPM arrays for the DUNE photon detection system / Falcone, A.; Andreani, A.; Bertolucci, S.; Brizzolari, C.; Buckanam, N.; Capasso, M.; Cattadori, C.; Carniti, P.; Citterio, M.; Francis, K.; Gallice, N.; Gola, A.; Gotti, C.; Lax, I.; Litrico, P.; Mazzi, A.; Mellinato, M.; Montanari, A.; Patrizii, L.; Pasqualini, L.; Pessina, G.; Pozzato, M.; Riboldi, S.; Sala, P.; Sirri, G.; Tenti, M.; Terranova, F.; Torti, M.; Travaglini, R.; Warner, D.; Wilson, R.; Zutshi, V.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 985:(2021), pp. 164648.1-164648.6. [10.1016/j.nima.2020.164648]
Cryogenic SiPM arrays for the DUNE photon detection system
Bertolucci, S.;Montanari, A.;Patrizii, L.;Pasqualini, L.;Pozzato, M.;Sirri, G.;Tenti, M.;Travaglini, R.;
2021
Abstract
In this paper we report on the characterization of SiPM tiles developed for the R&D on the DUNE Photon Detection System. The tiles were produced by Fondazione Bruno Kessler (FBK) employing Near Ultra-Violet High Density Standard Field (NUV-HD-SF) SiPMs. Special emphasis is given on cryo-reliability of the sensors, i.e. the stability of electric and mechanical properties after thermal cycles at room and 77 K temperature. The characterization includes the determination of the I-V curve, a high sensitivity measurement of Dark Count Rate at different overvoltages, and correlated noise. The single p.e. sensitivity is measured as a function of the number of sensors connected to a single electronic channel, after amplification at 77 K using a dedicated cold amplifier.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
