In this work, a field effect transistor based on a deoxyguanosine derivative (a DNA base) is demonstrated. Our experiments on transport through the source and drain electrodes interconnected by self-assembled guanine ribbons (Gottarelli et al. Helv. Chim. Acta 1998, 81, 2078; Gottarelli et al. Chem. Eur. J. 2000, 6, 3242; Giorgi et al. Chem Eur. J. 2002, 8, 2143) suggest that these devices behave like p-channel MOSFETs. The devices exhibit a maximum voltage gain of 0.76. This prototype transistor represents a starting point toward the development of biomolecular electronic devices.

Maruccio G., Visconti P., Arima V., D'Amico S., Biasco A., D'Amone E., et al. (2003). Field effect transistor based on a modified DNA base. NANO LETTERS, 3(4), 479-483 [10.1021/nl034046c].

Field effect transistor based on a modified DNA base

Masiero S.;Giorgi T.;Gottarelli G.
2003

Abstract

In this work, a field effect transistor based on a deoxyguanosine derivative (a DNA base) is demonstrated. Our experiments on transport through the source and drain electrodes interconnected by self-assembled guanine ribbons (Gottarelli et al. Helv. Chim. Acta 1998, 81, 2078; Gottarelli et al. Chem. Eur. J. 2000, 6, 3242; Giorgi et al. Chem Eur. J. 2002, 8, 2143) suggest that these devices behave like p-channel MOSFETs. The devices exhibit a maximum voltage gain of 0.76. This prototype transistor represents a starting point toward the development of biomolecular electronic devices.
2003
Maruccio G., Visconti P., Arima V., D'Amico S., Biasco A., D'Amone E., et al. (2003). Field effect transistor based on a modified DNA base. NANO LETTERS, 3(4), 479-483 [10.1021/nl034046c].
Maruccio G.; Visconti P.; Arima V.; D'Amico S.; Biasco A.; D'Amone E.; Cingolani R.; Rinaldi R.; Masiero S.; Giorgi T.; Gottarelli G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/959307
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